Proximity induced superconductivity in indium gallium arsenide quantum wells
نویسندگان
چکیده
منابع مشابه
Proximity induced superconductivity in indium gallium arsenide quantum wells
Centre for Advanced Photonics and Electronics (CAPE), Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, UK Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK Department of Electronic and Electrical Engineering, University of Shef...
متن کاملThe effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide „001..
The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been ...
متن کاملElectroluminescence Studies on Long Wavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide Thesis
A comprehensive study of the electroluminescence of four longwavelength microcavity devices with InAs/GaInAs quantum dot active regions emitting near 1.3 μm was conducted. The four molecular beam epitaxial grown samples with AlAs oxide aperture confinement layers were fabricated, characterized, and optically modeled. Optical power transmission of the samples was modeled using Matlab and compare...
متن کاملRed shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride
The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0 10 6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3 at 530 1C. The compressive strain of th...
متن کاملInduced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures
Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron g...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Magnetism and Magnetic Materials
سال: 2018
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2017.10.057